Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited epilayer (i) gives rigidity to structure, preventing crack generation, (ii) functions as back mirror and heat sink, (iii) enables one-step self-lift-off transfer LED structures from h-BN/sapphire during thermal treatment at 100 °C. Free-standing arrays LEDs thick membranes were processed their electro-optical performance was characterized. This approach can provide solution for low-cost, wafer scale, crack-free, highly reproducible with up centimeter-size areas.